obtained a p-type 2D MoSe 2 crystal in which Mo atoms are substituted by Nb atoms during material synthesis 4. Due to tunable electronic states in the two-dimensional plane, several research groups independently realized n-type and p-type doping in different 2D materials by electrostatic effect 1, surface charge transfer 2, and interlayer intercalation 3. To date, much effort has been made on achieving doping in 2D materials. Doping engineering is a very significant approach to manipulating electronic and photonic characteristics of various 2D materials for advanced applications in neuromorphic hardware, logical circuits, and optoelectronic devices. Two-dimensional materials with novel properties, like atomically thin nature, strong light-mass interaction, tunable bandgaps, weak interlayer van der Waals force, and random stacking, not only provide a feasible way to solve the size limit of electronic devices based on traditional semiconductors, but also offer unprecedented freedom to design and fabricate new photonic devices.
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